Direct Bonded Silicon Carbide (SiC) Substrates “SiCkrest”

Overview

Our direct bonded SiC substrate, SiCkrest, can realize a low resistance and a high strength, suppressing bipolar degradation and excellent switching characteristics throughout the entire substrate while maintaining the characteristics of a monocrystalline SiC.
Moreover, SiCkrest is attracting market attention as monocrystalline SiC recycling technology, which enables the use of precious monocrystalline SiC effectively.
Now we supply epi-ready 8/6inch wafers for customers.