Direct Bonded SiC Substrate "SiCkrest" Adopted for Power Semiconductor Devices by Shindengen Electric Manufacturing Co., Ltd.
December 22, 2025
Sumitomo Metal Mining Co., Ltd.
Tokyo, Japan - Sumitomo Metal Mining Co., Ltd. (TSE: 5713) is pleased to announce that its direct bonded silicon carbide (SiC) substrate "SiCkrest®" has been adopted for metal-oxide-semiconductor field-effect transistor (MOSFET), a power semiconductor device, developed by Shindengen Electric Manufacturing Co., Ltd.
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